JANSR2N3635UB/TR
Microchip Technology
        
                                Microchip Technology                            
                        
                                TRANS PNP 140V 10UA UB                            
                        $151.76
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $151.75500
                                        500+
                                            $150.23745
                                        1000+
                                            $148.7199
                                        1500+
                                            $147.20235
                                        2000+
                                            $145.6848
                                        2500+
                                            $144.16725
                                        Exquisite packaging
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                            Product details
Experience superior semiconductor performance with the JANSR2N3635UB/TR, a high-efficiency Bipolar Junction Transistor from Microchip Technology. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The JANSR2N3635UB/TR demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Microchip Technology produces the JANSR2N3635UB/TR using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the JANSR2N3635UB/TR stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
                General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 µA
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UB
