JANSP2N3810L
Microchip Technology
Microchip Technology
DUAL RH SMALL-SIGNAL BJT
$204.98
Available to order
Reference Price (USD)
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$204.97500
500+
$202.92525
1000+
$200.8755
1500+
$198.82575
2000+
$196.776
2500+
$194.72625
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JANSP2N3810L
$204.98
Product details
Introducing the JANSP2N3810L BJT Array by Microchip Technology, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The JANSP2N3810L excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The JANSP2N3810L features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The JANSP2N3810L also serves critical functions in industrial control systems. Microchip Technology has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the JANSP2N3810L delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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