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JANSH2N2221AUA/TR

Microchip Technology
JANSH2N2221AUA/TR Preview
Microchip Technology
RH SMALL-SIGNAL BJT
$170.54
Available to order
Reference Price (USD)
1+
$170.53500
500+
$168.82965
1000+
$167.1243
1500+
$165.41895
2000+
$163.7136
2500+
$162.00825
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Microchip Technology JANSH2N2221AUA/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANSH2N2221AUA/TR

JANSH2N2221AUA/TR

$170.54

Product details

Experience superior semiconductor performance with the JANSH2N2221AUA/TR, a high-efficiency Bipolar Junction Transistor from Microchip Technology. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The JANSH2N2221AUA/TR demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Microchip Technology produces the JANSH2N2221AUA/TR using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the JANSH2N2221AUA/TR stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 650 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA

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