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JAN2N2369AUB/TR

Microchip Technology
JAN2N2369AUB/TR Preview
Microchip Technology
TRANS NPN 20V UB
$18.75
Available to order
Reference Price (USD)
1+
$18.75000
500+
$18.5625
1000+
$18.375
1500+
$18.1875
2000+
$18
2500+
$17.8125
Exquisite packaging
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Microchip Technology JAN2N2369AUB/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JAN2N2369AUB/TR

JAN2N2369AUB/TR

$18.75

Product details

Experience superior semiconductor performance with the JAN2N2369AUB/TR, a high-efficiency Bipolar Junction Transistor from Microchip Technology. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The JAN2N2369AUB/TR demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Microchip Technology produces the JAN2N2369AUB/TR using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the JAN2N2369AUB/TR stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB

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