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JAN1N5811US

Microchip Technology
JAN1N5811US Preview
Microchip Technology
DIODE GEN PURP 150V 6A B-MELF
$7.98
Available to order
Reference Price (USD)
100+
$9.04400
Exquisite packaging
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JAN1N5811US

JAN1N5811US

$7.98

Product details

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C

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