JAN1N5614US
Microchip Technology
Microchip Technology
DIODE GEN PURP 200V 1A D5A
$8.10
Available to order
Reference Price (USD)
100+
$9.18000
Exquisite packaging
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JAN1N5614US
$8.10
Product details
Microchip Technology's JAN1N5614US represents the next generation of single rectifier diodes, combining cutting-edge technology with practical design. This component offers superior performance in voltage regulation and power conversion tasks, with exceptional temperature stability. The diode's advanced architecture ensures fast recovery times and minimal switching losses, critical for modern electronic systems. Designers will appreciate its compatibility with automated assembly processes and consistent batch-to-batch performance. Primary applications include consumer electronics, medical devices, and power distribution systems. The JAN1N5614US is particularly effective in battery-powered devices where energy efficiency is paramount. Its rugged design meets stringent quality standards for reliability in demanding environments. For engineers seeking a dependable rectification solution, the JAN1N5614US delivers outstanding results. Request a quote now to incorporate this high-quality diode into your next project.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 500 nA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 200°C
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