JAN1N5416US
Microchip Technology
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL
$10.62
Available to order
Reference Price (USD)
100+
$12.03600
Exquisite packaging
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JAN1N5416US
$10.62
Product details
The JAN1N5416US from Microchip Technology is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the JAN1N5416US offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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