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APT20M45BVRG

Microchip Technology
APT20M45BVRG Preview
Microchip Technology
MOSFET N-CH 200V 56A TO247
$11.18
Available to order
Reference Price (USD)
50+
$9.62380
Exquisite packaging
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APT20M45BVRG

APT20M45BVRG

$11.18

Product details

Discover the exceptional capabilities of Microchip Technology's APT20M45BVRG, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The APT20M45BVRG boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the APT20M45BVRG provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3

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