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2N6306T1

Microchip Technology
2N6306T1 Preview
Microchip Technology
POWER BJT
$335.78
Available to order
Reference Price (USD)
1+
$335.77500
500+
$332.41725
1000+
$329.0595
1500+
$325.70175
2000+
$322.344
2500+
$318.98625
Exquisite packaging
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2N6306T1

2N6306T1

$335.78

Product details

The 2N6306T1 by Microchip Technology is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the 2N6306T1 ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The 2N6306T1 is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the 2N6306T1 delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
  • Power - Max: 125 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: -

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