2N5793AU/TR
Microchip Technology
Microchip Technology
DUAL SMALL-SIGNAL BJT
$68.34
Available to order
Reference Price (USD)
1+
$68.34000
500+
$67.6566
1000+
$66.9732
1500+
$66.2898
2000+
$65.6064
2500+
$64.923
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology 2N5793AU/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N5793AU/TR
$68.34
Product details
Microchip Technology's 2N5793AU/TR represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The 2N5793AU/TR delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The 2N5793AU/TR demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The 2N5793AU/TR also serves critical functions in power distribution systems. Microchip Technology has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The 2N5793AU/TR offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: -
Viewed products