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MMSS8050-H-TP

Micro Commercial Co
MMSS8050-H-TP Preview
Micro Commercial Co
TRANS NPN 25V 1.5A SOT23
$0.28
Available to order
Reference Price (USD)
3,000+
$0.03427
6,000+
$0.03091
15,000+
$0.02688
30,000+
$0.02419
75,000+
$0.02150
150,000+
$0.01792
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Micro Commercial Co MMSS8050-H-TP is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MMSS8050-H-TP

MMSS8050-H-TP

$0.28

Product details

Experience superior semiconductor performance with the MMSS8050-H-TP, a high-efficiency Bipolar Junction Transistor from Micro Commercial Co. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The MMSS8050-H-TP demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Micro Commercial Co produces the MMSS8050-H-TP using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the MMSS8050-H-TP stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23

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