MRF1000MB
MACOM Technology Solutions
MACOM Technology Solutions
RF TRANS NPN 20V 332A-03
$45.48
Available to order
Reference Price (USD)
1+
$45.48000
500+
$45.0252
1000+
$44.5704
1500+
$44.1156
2000+
$43.6608
2500+
$43.206
Exquisite packaging
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| EMS | 3-7 days |
MACOM Technology Solutions MRF1000MB is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MRF1000MB
$45.48
Product details
MACOM Technology Solutions presents the MRF1000MB a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The MRF1000MB also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. MACOM Technology Solutions employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal MRF1000MB variant for your RF power amplification requirements.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 10.7dB ~ 12dB
- Power - Max: 0.7W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 332A-02
- Supplier Device Package: 332A-03, Style 2
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