SD215DE TO-72 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
HIGH SPEED N-CHANNEL LATERAL DMO
$6.13
Available to order
Reference Price (USD)
1+
$6.13000
500+
$6.0687
1000+
$6.0074
1500+
$5.9461
2000+
$5.8848
2500+
$5.8235
Exquisite packaging
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SD215DE TO-72 4L
$6.13
Product details
Enhance your electronic designs with the SD215DE TO-72 4L single MOSFET transistor from Linear Integrated Systems, Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SD215DE TO-72 4L features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SD215DE TO-72 4L particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SD215DE TO-72 4L represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 25V
- Rds On (Max) @ Id, Vgs: 45Ohm @ 1mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +30V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
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