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IXTX110N20L2

IXYS
IXTX110N20L2 Preview
IXYS
MOSFET N-CH 200V 110A PLUS247-3
$37.67
Available to order
Reference Price (USD)
1+
$25.50000
30+
$21.67500
120+
$20.14500
510+
$17.85000
Exquisite packaging
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IXTX110N20L2

IXTX110N20L2

$37.67

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3 Variant

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