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IXTT26N60P

IXYS
IXTT26N60P Preview
IXYS
MOSFET N-CH 600V 26A TO268
$10.01
Available to order
Reference Price (USD)
30+
$6.53967
Exquisite packaging
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IXTT26N60P

IXTT26N60P

$10.01

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268AA
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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