Shopping cart

Subtotal: $0.00

IXTT26N50P

IXYS
IXTT26N50P Preview
IXYS
MOSFET N-CH 500V 26A TO268
$9.36
Available to order
Reference Price (USD)
30+
$5.26867
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTT26N50P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTT26N50P

IXTT26N50P

$9.36

Product details

Enhance your electronic designs with the IXTT26N50P single MOSFET transistor from IXYS, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IXTT26N50P features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IXTT26N50P particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IXTT26N50P represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268AA
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Viewed products

Vishay Siliconix

SQ3419EV-T1_BE3

$0.00 (not set)
Vishay Siliconix

SI3129DV-T1-GE3

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM13ND50CI

$0.00 (not set)
IXYS

IXFN150N65X2

$0.00 (not set)
STMicroelectronics

STW40N60M2-4

$0.00 (not set)
Microchip Technology

APT56F60B2

$0.00 (not set)
Vishay Siliconix

SQM35N30-97_GE3

$0.00 (not set)
Nexperia USA Inc.

BUK7E1R8-40E,127

$0.00 (not set)
onsemi

NTMFS4847NAT1G

$0.00 (not set)
Infineon Technologies

IRLU3110ZPBF

$0.00 (not set)
Top