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IXTQ130N10T

IXYS
IXTQ130N10T Preview
IXYS
MOSFET N-CH 100V 130A TO3P
$5.48
Available to order
Reference Price (USD)
1+
$3.02000
30+
$2.43000
120+
$2.21400
510+
$1.79280
1,020+
$1.51200
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IXTQ130N10T

IXTQ130N10T

$5.48

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3

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