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IXTN660N04T4

IXYS
IXTN660N04T4 Preview
IXYS
MOSFET N-CH 40V 660A SOT227B
$31.20
Available to order
Reference Price (USD)
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$21.12000
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$19.53600
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$16.68480
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$14.78400
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IXTN660N04T4

IXTN660N04T4

$31.20

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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