IXTN660N04T4
IXYS
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IXYS
MOSFET N-CH 40V 660A SOT227B
$31.20
Available to order
Reference Price (USD)
1+
$21.12000
10+
$19.53600
100+
$16.68480
500+
$14.78400
Exquisite packaging
Discount
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EMS | 3-7 days |
IXYS IXTN660N04T4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
- FET Feature: Current Sensing
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC