Shopping cart

Subtotal: $0.00

IXTN17N120L

IXYS
IXTN17N120L Preview
IXYS
MOSFET N-CH 1200V 15A SOT-227B
$54.61
Available to order
Reference Price (USD)
1+
$54.61000
500+
$54.0639
1000+
$53.5178
1500+
$52.9717
2000+
$52.4256
2500+
$51.8795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTN17N120L is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTN17N120L

IXTN17N120L

$54.61

Product details

IXYS's IXTN17N120L stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The IXTN17N120L demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The IXTN17N120L also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

Viewed products

Vishay Siliconix

SISA16DN-T1-GE3

$0.00 (not set)
Infineon Technologies

IPI50R199CPXKSA1

$0.00 (not set)
Infineon Technologies

IRF7495TRPBF

$0.00 (not set)
Infineon Technologies

BSC067N06LS3GATMA1

$0.00 (not set)
STMicroelectronics

STH12N120K5-2

$0.00 (not set)
Infineon Technologies

IPTG111N20NM3FDATMA1

$0.00 (not set)
IXYS

IXTQ450P2

$0.00 (not set)
Wolfspeed, Inc.

C3M0120065D

$0.00 (not set)
Panjit International Inc.

PJMP130N65EC_T0_00001

$0.00 (not set)
Toshiba Semiconductor and Storage

TPW1R306PL,L1Q

$0.00 (not set)
Top