IXTJ4N150
IXYS
IXYS
MOSFET N-CH 1500V 2.5A TO247
$11.67
Available to order
Reference Price (USD)
30+
$7.44167
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IXTJ4N150
$11.67
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
