Shopping cart

Subtotal: $0.00

IXTH32P20T

IXYS
IXTH32P20T Preview
IXYS
MOSFET P-CH 200V 32A TO247
$7.81
Available to order
Reference Price (USD)
30+
$6.15000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTH32P20T is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTH32P20T

IXTH32P20T

$7.81

Product details

IXYS's IXTH32P20T stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The IXTH32P20T demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The IXTH32P20T also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

Viewed products

Diodes Incorporated

DMNH6011LK3-13

$0.00 (not set)
Infineon Technologies

IPD30N03S4L14ATMA1

$0.00 (not set)
Diodes Incorporated

ZXMN20B28KTC

$0.00 (not set)
Infineon Technologies

BSC0502NSIATMA1

$0.00 (not set)
Rectron USA

RM50P30DF

$0.00 (not set)
Microchip Technology

APT5018BFLLG

$0.00 (not set)
onsemi

FDP2532

$0.00 (not set)
Toshiba Semiconductor and Storage

TK750A60F,S4X

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM7ND65CI

$0.00 (not set)
Diodes Incorporated

ZVN4210A

$0.00 (not set)
Top