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IXTH16N50D2

IXYS
IXTH16N50D2 Preview
IXYS
MOSFET N-CH 500V 16A TO247-3
$12.95
Available to order
Reference Price (USD)
1+
$10.45000
10+
$9.40500
30+
$8.56900
120+
$7.73300
270+
$7.10600
510+
$6.47900
1,020+
$5.64300
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IXTH16N50D2

IXTH16N50D2

$12.95

Product details

Discover the exceptional capabilities of IXYS's IXTH16N50D2, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The IXTH16N50D2 boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the IXTH16N50D2 provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 695W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

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