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IXTH02N250

IXYS
IXTH02N250 Preview
IXYS
MOSFET N-CH 2500V 200MA TO247
$18.00
Available to order
Reference Price (USD)
1+
$12.32000
30+
$10.36000
120+
$9.52000
510+
$8.12000
1,020+
$7.84000
Exquisite packaging
Discount
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IXTH02N250

IXTH02N250

$18.00

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

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