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IXTA4N80P

IXYS
IXTA4N80P Preview
IXYS
MOSFET N-CH 800V 3.6A TO263
$2.58
Available to order
Reference Price (USD)
50+
$1.57500
Exquisite packaging
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IXYS IXTA4N80P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IXTA4N80P

IXTA4N80P

$2.58

Product details

Enhance your electronic designs with the IXTA4N80P single MOSFET transistor from IXYS, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IXTA4N80P features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IXTA4N80P particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IXTA4N80P represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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