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IXTA2R4N120P-TRL

IXYS
IXTA2R4N120P-TRL Preview
IXYS
MOSFET N-CH 1200V 2.4A TO263
$4.46
Available to order
Reference Price (USD)
1+
$4.46028
500+
$4.4156772
1000+
$4.3710744
1500+
$4.3264716
2000+
$4.2818688
2500+
$4.237266
Exquisite packaging
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IXYS IXTA2R4N120P-TRL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IXTA2R4N120P-TRL

IXTA2R4N120P-TRL

$4.46

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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