Shopping cart

Subtotal: $0.00

IXTA08N100P

IXYS
IXTA08N100P Preview
IXYS
MOSFET N-CH 1000V 800MA TO263
$2.60
Available to order
Reference Price (USD)
50+
$1.70000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXTA08N100P is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXTA08N100P

IXTA08N100P

$2.60

Product details

Discover the exceptional capabilities of IXYS's IXTA08N100P, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The IXTA08N100P boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the IXTA08N100P provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

STMicroelectronics

STB18N60M6

$0.00 (not set)
Fairchild Semiconductor

FQI27N25TU

$0.00 (not set)
STMicroelectronics

STW19NM50N

$0.00 (not set)
IXYS

IXTQ36N30P

$0.00 (not set)
Microchip Technology

APT1201R6SVFRG

$0.00 (not set)
Diodes Incorporated

DMP3026SFDE-13

$0.00 (not set)
Microchip Technology

LND01K1-G

$0.00 (not set)
onsemi

FQD2N80TM

$0.00 (not set)
onsemi

NTD4959NHT4G

$0.00 (not set)
Diodes Incorporated

DMN3028LQ-7

$0.00 (not set)
Top