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IXFX32N100P

IXYS
IXFX32N100P Preview
IXYS
MOSFET N-CH 1000V 32A PLUS247-3
$22.98
Available to order
Reference Price (USD)
1+
$17.12000
30+
$14.39300
120+
$13.22600
510+
$11.28100
Exquisite packaging
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IXFX32N100P

IXFX32N100P

$22.98

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3 Variant

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