Shopping cart

Subtotal: $0.00

IXFP26N65X2

IXYS
IXFP26N65X2 Preview
IXYS
IXFP26N65X2
$9.73
Available to order
Reference Price (USD)
1+
$9.73000
500+
$9.6327
1000+
$9.5354
1500+
$9.4381
2000+
$9.3408
2500+
$9.2435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

IXYS IXFP26N65X2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXFP26N65X2

IXFP26N65X2

$9.73

Product details

IXYS presents the IXFP26N65X2, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The IXFP26N65X2 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The IXFP26N65X2 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Viewed products

Diodes Incorporated

DMN2710UWQ-13

$0.00 (not set)
Infineon Technologies

IPS60R1K0CEAKMA1

$0.00 (not set)
Diodes Incorporated

DMP3013SFK-7

$0.00 (not set)
Nexperia USA Inc.

PMN40XPEAX

$0.00 (not set)
onsemi

STMFS5C609NLT1G

$0.00 (not set)
Renesas Electronics America Inc

2SJ135-AZ

$0.00 (not set)
Microchip Technology

MSC080SMA120JS15

$0.00 (not set)
Infineon Technologies

IPB050N10NF2SATMA1

$0.00 (not set)
Toshiba Semiconductor and Storage

TK5P65W,RQ

$0.00 (not set)
Diodes Incorporated

DMTH10H010SPS-13

$0.00 (not set)
Top