IXFN38N100P
IXYS

IXYS
MOSFET N-CH 1000V 38A SOT-227B
$49.37
Available to order
Reference Price (USD)
1+
$37.40000
10+
$34.59500
30+
$31.79000
100+
$29.54600
250+
$27.11500
Exquisite packaging
Discount
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC