IXDN609SIA
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
IC GATE DRVR LOW-SIDE 8SOIC
$2.13
Available to order
Reference Price (USD)
1+
$2.13000
500+
$2.1087
1000+
$2.0874
1500+
$2.0661
2000+
$2.0448
2500+
$2.0235
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
IXYS Integrated Circuits Division IXDN609SIA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IXDN609SIA
$2.13
Product details
Experience superior power management with the IXDN609SIA PMIC - Gate Driver from IXYS Integrated Circuits Division. This high-performance IC is engineered to deliver precise control for power semiconductor devices in various conversion topologies. The IXDN609SIA features an advanced architecture that optimizes switching performance while minimizing energy losses. Its intelligent drive strength adjustment ensures optimal gate control under different operating conditions. The gate driver's robust design includes comprehensive protection against voltage spikes and transient conditions. In solar microinverters, the IXDN609SIA enables efficient power conversion with maximum energy harvest. For industrial motor control, it provides reliable switching for variable frequency drives and servo systems. The component also excels in medical power supplies, where clean and stable operation is essential. The IXDN609SIA incorporates active Miller clamp functionality that prevents unwanted turn-on in bridge configurations. Its configurable turn-on/off speeds allow designers to balance between efficiency and EMI performance. The gate driver's low quiescent current makes it suitable for always-on applications requiring energy efficiency. These features make it ideal for building automation systems and smart grid infrastructure. The IXDN609SIA also performs exceptionally in high-power RF amplifiers and particle accelerator power supplies. Its isolated design meets stringent safety requirements for high-voltage applications. The device supports various control interfaces, including isolated and non-isolated options. With its combination of performance and reliability, the IXDN609SIA is a versatile solution for challenging power management applications. Our technical experts are ready to assist with your design integration - visit our website to submit your inquiry and access comprehensive product resources.
General specs
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 35V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 22ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Viewed products
