IVCR1401DPR
Inventchip
Inventchip
SIC MOSFET AND IGBT DRIVER, 4A,
$2.81
Available to order
Reference Price (USD)
1+
$2.81000
500+
$2.7819
1000+
$2.7538
1500+
$2.7257
2000+
$2.6976
2500+
$2.6695
Exquisite packaging
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IVCR1401DPR
$2.81
Product details
The IVCR1401DPR from Inventchip is a high-performance PMIC - Gate Driver designed to optimize power management in modern electronic systems. This advanced IC ensures efficient switching and precise control for a wide range of applications. With its robust design, the IVCR1401DPR delivers reliable performance in demanding environments, making it an ideal choice for engineers seeking top-tier gate driver solutions. Its integration capabilities simplify circuit design while enhancing overall system efficiency. The IVCR1401DPR stands out for its ability to handle complex power management tasks with ease, providing seamless operation across various voltage levels. Whether you're designing industrial equipment or consumer electronics, this gate driver offers the flexibility and performance needed to meet rigorous standards. Key features include adaptive dead-time control, comprehensive protection mechanisms, and low-power consumption. These characteristics ensure safe operation while maximizing energy efficiency. The IVCR1401DPR is particularly suited for motor control systems, renewable energy inverters, and high-frequency power supplies. Its versatility extends to automotive applications where reliability is paramount. For data centers, this component helps maintain stable power delivery to critical servers and networking equipment. The IVCR1401DPR also excels in industrial automation, supporting precise control of heavy machinery. To experience the benefits of this cutting-edge gate driver, contact our sales team today for pricing and availability. Submit your inquiry online to receive customized support for your specific application requirements.
General specs
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: 19V ~ 25V
- Logic Voltage - VIL, VIH: 1.7V, 1.6V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 13ns, 13ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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