IV1Q12160T4
Inventchip
Inventchip
SIC MOSFET, 1200V 160MOHM, TO-24
$19.64
Available to order
Reference Price (USD)
1+
$19.64000
500+
$19.4436
1000+
$19.2472
1500+
$19.0508
2000+
$18.8544
2500+
$18.658
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Inventchip IV1Q12160T4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IV1Q12160T4
$19.64
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 2.9V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Viewed products
