IS61NLP25636A-200B3LI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT PARALLEL 165TFBGA
$15.59
Available to order
Reference Price (USD)
144+
$14.51917
Exquisite packaging
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| EMS | 3-7 days |
ISSI, Integrated Silicon Solution Inc IS61NLP25636A-200B3LI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IS61NLP25636A-200B3LI
$15.59
Product details
The IS61NLP25636A-200B3LI memory IC from ISSI, Integrated Silicon Solution Inc provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements.
Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The IS61NLP25636A-200B3LI incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration.
Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems.
For complete technical details and purchasing information about this ISSI, Integrated Silicon Solution Inc memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the IS61NLP25636A-200B3LI in your specific application, along with competitive pricing options.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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