IS61LPS25636A-200B3LI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT PARALLEL 165TFBGA
$15.59
Available to order
Reference Price (USD)
144+
$14.51917
Exquisite packaging
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| EMS | 3-7 days |
ISSI, Integrated Silicon Solution Inc IS61LPS25636A-200B3LI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IS61LPS25636A-200B3LI
$15.59
Product details
The IS61LPS25636A-200B3LI memory IC by ISSI, Integrated Silicon Solution Inc delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The IS61LPS25636A-200B3LI offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The IS61LPS25636A-200B3LI is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this ISSI, Integrated Silicon Solution Inc memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the IS61LPS25636A-200B3LI memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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