IS61LF51218A-7.5TQLI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT PARALLEL 100TQFP
$15.43
Available to order
Reference Price (USD)
1+
$15.93000
10+
$14.75300
25+
$14.54760
72+
$14.36931
144+
$12.59319
288+
$12.04875
504+
$11.96843
Exquisite packaging
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ISSI, Integrated Silicon Solution Inc IS61LF51218A-7.5TQLI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IS61LF51218A-7.5TQLI
$15.43
Product details
Discover the IS61LF51218A-7.5TQLI by ISSI, Integrated Silicon Solution Inc, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The IS61LF51218A-7.5TQLI features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The IS61LF51218A-7.5TQLI is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this ISSI, Integrated Silicon Solution Inc memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the IS61LF51218A-7.5TQLI, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 117 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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