IS43LR16160G-6BL-TR
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PARALLEL 60TFBGA
$5.49
Available to order
Reference Price (USD)
2,000+
$5.13844
Exquisite packaging
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| EMS | 3-7 days |
ISSI, Integrated Silicon Solution Inc IS43LR16160G-6BL-TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IS43LR16160G-6BL-TR
$5.49
Product details
Introducing the IS43LR16160G-6BL-TR from ISSI, Integrated Silicon Solution Inc, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The IS43LR16160G-6BL-TR incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The IS43LR16160G-6BL-TR also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this ISSI, Integrated Silicon Solution Inc memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the IS43LR16160G-6BL-TR to ensure successful implementation in your design.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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