IS43DR86400E-25DBLI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TWBGA
$5.89
Available to order
Reference Price (USD)
1+
$7.20000
10+
$6.62400
25+
$6.48600
50+
$6.46300
242+
$5.79798
484+
$5.62217
726+
$5.34698
1,210+
$5.15970
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
ISSI, Integrated Silicon Solution Inc IS43DR86400E-25DBLI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IS43DR86400E-25DBLI
$5.89
Product details
The IS43DR86400E-25DBLI from ISSI, Integrated Silicon Solution Inc is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the IS43DR86400E-25DBLI ensures efficient operation in both industrial and commercial environments.
Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability.
Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The IS43DR86400E-25DBLI is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions.
For pricing and availability of this ISSI, Integrated Silicon Solution Inc memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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