IS43DR86400D-3DBLI
ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TWBGA
$6.34
Available to order
Reference Price (USD)
242+
$6.84926
Exquisite packaging
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ISSI, Integrated Silicon Solution Inc IS43DR86400D-3DBLI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
The IS43DR86400D-3DBLI by ISSI, Integrated Silicon Solution Inc represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The IS43DR86400D-3DBLI demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The IS43DR86400D-3DBLI also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this ISSI, Integrated Silicon Solution Inc memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the IS43DR86400D-3DBLI memory solution.
General specs
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)