NDT18PFH-9MET TR
Insignis Technology Corporation

Insignis Technology Corporation
IC DRAM 1GBIT PARALLEL 78FBGA
$4.60
Available to order
Reference Price (USD)
1+
$4.60000
500+
$4.554
1000+
$4.508
1500+
$4.462
2000+
$4.416
2500+
$4.37
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Insignis Technology Corporation NDT18PFH-9MET TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
The NDT18PFH-9MET TR by Insignis Technology Corporation represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The NDT18PFH-9MET TR demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The NDT18PFH-9MET TR also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Insignis Technology Corporation memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the NDT18PFH-9MET TR memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-VFBGA
- Supplier Device Package: 78-FBGA (8x10.5)