SPD04P10PLGBTMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 100V 4.2A TO252-3
$1.01
Available to order
Reference Price (USD)
2,500+
$0.32793
5,000+
$0.30532
12,500+
$0.29401
25,000+
$0.28784
Exquisite packaging
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SPD04P10PLGBTMA1
$1.01
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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