SPB80P06PGATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 80A TO263-3
$5.13
Available to order
Reference Price (USD)
1,000+
$1.92485
2,000+
$1.82861
5,000+
$1.75986
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| EMS | 3-7 days |
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SPB80P06PGATMA1
$5.13
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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