SPA02N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 2A TO220-FP
$1.82
Available to order
Reference Price (USD)
1+
$1.46000
10+
$1.30200
100+
$1.04290
500+
$0.82422
1,000+
$0.66517
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| EMS | 3-7 days |
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SPA02N80C3XKSA1
$1.82
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
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