SIDC50D60C6X1SA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 600V 200A WAFER
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SIDC50D60C6X1SA1
$0.00
Product details
The SIDC50D60C6X1SA1 from Infineon Technologies represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The SIDC50D60C6X1SA1 is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the SIDC50D60C6X1SA1 is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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