SIDC30D120E6X1SA2
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
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SIDC30D120E6X1SA2
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Product details
Optimize your power electronics with Infineon Technologies's SIDC30D120E6X1SA2 single rectifier diode, a high-efficiency solution for modern circuit designs. This diode features superior current handling capabilities combined with low power dissipation, making it ideal for energy-conscious applications. The SIDC30D120E6X1SA2 demonstrates excellent performance in voltage clamping, freewheeling, and reverse polarity protection circuits. Its advanced semiconductor design ensures reliable operation in switching power supplies, DC-DC converters, and battery management systems. The component's thermal characteristics allow for operation in high ambient temperature environments without performance degradation. Common industry applications include electric vehicle charging systems, industrial motor drives, and photovoltaic inverters. Additional advantages include consistent forward voltage characteristics and robust surge protection. Engineers will appreciate the diode's reliability in mission-critical power conversion tasks. For detailed technical information and volume pricing options, contact our sales team today.
General specs
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 35A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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