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SGB02N120ATMA1

Infineon Technologies
SGB02N120ATMA1 Preview
Infineon Technologies
IGBT 1200V 6.2A 62W TO263-3
$1.53
Available to order
Reference Price (USD)
1,000+
$1.00774
Exquisite packaging
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Infineon Technologies SGB02N120ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SGB02N120ATMA1

SGB02N120ATMA1

$1.53

Product details

The SGB02N120ATMA1 from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the SGB02N120ATMA1 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the SGB02N120ATMA1 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.

General specs

  • Product Status: Last Time Buy
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 6.2 A
  • Current - Collector Pulsed (Icm): 9.6 A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62 W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11 nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2

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