IST015N06NM5AUMA1
Infineon Technologies
Infineon Technologies
OPTIMOS 5 POWER MOSFET 60 V
$6.92
Available to order
Reference Price (USD)
1+
$6.92000
500+
$6.8508
1000+
$6.7816
1500+
$6.7124
2000+
$6.6432
2500+
$6.574
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| EMS | 3-7 days |
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IST015N06NM5AUMA1
$6.92
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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