ISS55EP06LMXTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 180MA SOT23-3
$0.45
Available to order
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ISS55EP06LMXTSA1
$0.45
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-5
- Package / Case: TO-236-3, SC-59, SOT-23-3
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