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IRG4BC30FD1PBF

Infineon Technologies
IRG4BC30FD1PBF Preview
Infineon Technologies
IGBT 600V 31A 100W TO220AB
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
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Infineon Technologies IRG4BC30FD1PBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRG4BC30FD1PBF

IRG4BC30FD1PBF

$1.76

Product details

The IRG4BC30FD1PBF by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IRG4BC30FD1PBF is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IRG4BC30FD1PBF and experience unmatched performance. Contact us today for more details and pricing options.

General specs

  • Product Status: Obsolete
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 124 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100 W
  • Switching Energy: 370µJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 22ns/250ns
  • Test Condition: 480V, 17A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 46 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB

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