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IRFP4310ZPBF

Infineon Technologies
IRFP4310ZPBF Preview
Infineon Technologies
MOSFET N-CH 100V 120A TO247AC
$5.50
Available to order
Reference Price (USD)
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$3.96000
10+
$3.56400
100+
$2.96460
500+
$2.44440
1,000+
$2.09763
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Infineon Technologies IRFP4310ZPBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRFP4310ZPBF

IRFP4310ZPBF

$5.50

Product details

Optimize your power management solutions with the IRFP4310ZPBF single MOSFET transistor from Infineon Technologies, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The IRFP4310ZPBF features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the IRFP4310ZPBF provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

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