IRFH5110TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 11A/63A 8PQFN
$1.97
Available to order
Reference Price (USD)
4,000+
$0.63140
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IRFH5110TRPBF
$1.97
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3152 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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